T. Takagi, K. Seine, A. Iida, M. Kobiki, Y. Mitsui, F. Takeda
{"title":"一种采用集群场效应管的1瓦28 GHz频带放大器","authors":"T. Takagi, K. Seine, A. Iida, M. Kobiki, Y. Mitsui, F. Takeda","doi":"10.1109/MWSYM.1985.1131975","DOIUrl":null,"url":null,"abstract":"The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.","PeriodicalId":446741,"journal":{"name":"1985 IEEE MTT-S International Microwave Symposium Digest","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1985-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 1 Watt 28 GHz Band Amplifier Using Clustered FETs\",\"authors\":\"T. Takagi, K. Seine, A. Iida, M. Kobiki, Y. Mitsui, F. Takeda\",\"doi\":\"10.1109/MWSYM.1985.1131975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.\",\"PeriodicalId\":446741,\"journal\":{\"name\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1985-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1985 IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1985.1131975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1985 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1985.1131975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 1 Watt 28 GHz Band Amplifier Using Clustered FETs
The clustered FET operating at Ka-band, in which four FET cells with 800 µm gate width are combined by the new 4-way monolithic combiner, has been developed. The amplifier using these clustered FETs has been demonstrated with more than 1 watt power output with 6 dB associated gain over 27.6 - 29.3 GHz.