采用氟植入的三栅氧化物CMOS技术用于片上系统

2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104) Pub Date : 2000-06-13 DOI:10.1109/VLSIT.2000.852804

Y. Goto, K. Imai, E. Hasegawa, T. Ohashi, N. Kimizuka, T. Toda, N. Hamanaka, T. Horiuchi

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引用次数: 8

摘要

我们开发了一种三栅氧化CMOS技术，该技术集成了0.10-/spl mu/m栅极长度1.2 v高速CMOS (tox为1.9 nm)，低功耗CMOS (tox为2.5 nm)和2.5 v I/O晶体管(tox为5.0 nm)。同时制备1.9 nm和2.5 nm栅极氧化物的关键技术是氟注入。我们选择性地在低功耗CMOS区域植入氟，成功地将栅极漏电流降低了1.5个数量级。

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A triple gate oxide CMOS technology using fluorine implant for system-on-a-chip

We have developed a triple gate oxide CMOS technology that integrates 0.10-/spl mu/m gate length 1.2-V high-speed CMOS (tox of 1.9 nm), low-power CMOS (tox of 2.5 nm) and 2.5-V I/O transistors (tox of 5.0 nm). The key technology is fluorine implantation in order to fabricate 1.9-nm and 2.5-nm gate oxide simultaneously. We selectively implanted fluorine into low-power CMOS area and successfully reduced the gate leakage current by 1.5 orders of magnitude.

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2000 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.00CH37104)

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