用光层复合对多晶光电器件的影响

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140) Pub Date : 1998-12-14 DOI:10.1109/COMMAD.1998.791681

S. Hinckley, E. Gluszak

{"title":"用光层复合对多晶光电器件的影响","authors":"S. Hinckley, E. Gluszak","doi":"10.1109/COMMAD.1998.791681","DOIUrl":null,"url":null,"abstract":"The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n/sup +/-p silicon homojunction solar cell, and an n/sup +/-p CdS/CuInSe/sub 2/ heterojunction solar cell.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The effects of depletion layer recombination in polycrystalline photovoltaic devices under illumination\",\"authors\":\"S. Hinckley, E. Gluszak\",\"doi\":\"10.1109/COMMAD.1998.791681\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n/sup +/-p silicon homojunction solar cell, and an n/sup +/-p CdS/CuInSe/sub 2/ heterojunction solar cell.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791681\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791681","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用通量法模拟了在太阳光照下损耗层和晶界复合对多晶半导体光伏器件性能的影响。研究了多晶n/sup +/-p硅异质结太阳电池和n/sup +/-p CdS/CuInSe/sub 2异质结太阳电池。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The effects of depletion layer recombination in polycrystalline photovoltaic devices under illumination

The flux method has been used to simulate the effect of depletion layer and grain boundary recombination on the performance of polycrystalline semiconductor photovoltaic devices under solar illumination. Results are presented for a polycrystalline n/sup +/-p silicon homojunction solar cell, and an n/sup +/-p CdS/CuInSe/sub 2/ heterojunction solar cell.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)

自引率

0.00%

发文量