HVQFN封装工艺致翘曲:设计参数和工艺条件的影响

D.G. Yang, L. Ernst, K. Jansen, G.Q. Zhang, J. Janssen, H. Bressers
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引用次数: 6

摘要

QFN封装由于其优异的热学和电学性能以及小型化和低成本,正迅速得到市场的认可。然而,成型过程中引起的翘曲问题是产品制造中非常关注的问题。为了研究电磁兼容特性、封装参数和加工条件对翘曲的影响,采用飞利浦商用载波HVQFN封装进行了实验方法和数值模拟。对QFN基带进行了一系列模塑实验。在成型实验中,采用了不同的工艺参数、填料的加入量和模具的厚度。采用接触式测头坐标测量系统测量翘曲量。在有限模拟中,采用了先前提出的封装电磁兼容的固化相关本构模型来描述材料在固化过程中的行为。结果表明,填充料用量和模具厚度对最终翘曲水平均有显著影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process-induced Warpage in HVQFN Package: Effect of Design Parameters and Processing Conditions
QFN package is getting rapid market acceptance because of its excellent thermal and electrical performance and its miniaturization and low cost. However, the warpage problem caused by molding process imposes a great concern for the manufacturing of the products. To investigate the effect of the EMC properties, package parameters and processing conditions on the warpage, experimental approach and numerical simulations were conducted on Philips business carrier HVQFN package. A series of molding experiments for QFN matrix strips with the model-molding compounds were performed. In the molding experiments, different processing parameters, filler loading and die thickness were used. The warpage was measured by a contact probe coordinate measuring system. In the finite simulations, a previously proposed cure-dependent constitutive model for the encapsulating EMC was applied to describe the behavior of the material during the curing process. The results show that both of the filler percentage and the die thickness has a significant effect on the final warpage level.
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