一种基于微机械的射频低噪声压控振荡器

Darrin J. Young, B. E. Boser
{"title":"一种基于微机械的射频低噪声压控振荡器","authors":"Darrin J. Young, B. E. Boser","doi":"10.1109/CICC.1997.606660","DOIUrl":null,"url":null,"abstract":"A voltage-controlled oscillator (VCO) employs an aluminum micromachined variable capacitor for frequency tuning. Unlike conventional varactor diodes, the capacitor is fabricated on a silicon substrate and thus amenable to monolithic integration with a standard IC process. Experimental capacitors achieve a 16% tuning range with a nominal capacitance value of 2 pF and a quality factor above 60 at 1 GHz. A prototype VCO exhibits -107 dBc/Hz phase-noise at 100 kHz offset frequency from the carrier. The center frequency of 714 MHz and 14 MHz tuning range are limited by the test setup.","PeriodicalId":111737,"journal":{"name":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","volume":"447 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-05-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"74","resultStr":"{\"title\":\"A micromachine-based RF low-noise voltage-controlled oscillator\",\"authors\":\"Darrin J. Young, B. E. Boser\",\"doi\":\"10.1109/CICC.1997.606660\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A voltage-controlled oscillator (VCO) employs an aluminum micromachined variable capacitor for frequency tuning. Unlike conventional varactor diodes, the capacitor is fabricated on a silicon substrate and thus amenable to monolithic integration with a standard IC process. Experimental capacitors achieve a 16% tuning range with a nominal capacitance value of 2 pF and a quality factor above 60 at 1 GHz. A prototype VCO exhibits -107 dBc/Hz phase-noise at 100 kHz offset frequency from the carrier. The center frequency of 714 MHz and 14 MHz tuning range are limited by the test setup.\",\"PeriodicalId\":111737,\"journal\":{\"name\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"volume\":\"447 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-05-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"74\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of CICC 97 - Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1997.606660\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of CICC 97 - Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1997.606660","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 74

摘要

压控振荡器(VCO)采用铝制微机械可变电容器进行频率调谐。与传统的变容二极管不同,电容器是在硅衬底上制造的,因此可以与标准IC工艺进行单片集成。实验电容器实现16%的调谐范围,标称电容值为2pf,在1ghz时质量因数大于60。一个原型VCO显示-107 dBc/Hz相位噪声在100 kHz偏移频率从载波。714mhz的中心频率和14mhz的调谐范围受到测试设置的限制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A micromachine-based RF low-noise voltage-controlled oscillator
A voltage-controlled oscillator (VCO) employs an aluminum micromachined variable capacitor for frequency tuning. Unlike conventional varactor diodes, the capacitor is fabricated on a silicon substrate and thus amenable to monolithic integration with a standard IC process. Experimental capacitors achieve a 16% tuning range with a nominal capacitance value of 2 pF and a quality factor above 60 at 1 GHz. A prototype VCO exhibits -107 dBc/Hz phase-noise at 100 kHz offset frequency from the carrier. The center frequency of 714 MHz and 14 MHz tuning range are limited by the test setup.
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