III-V型氮化物量子点中电子态的原子计算

IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings Pub Date : 2003-10-14 DOI:10.1109/NUSOD.2003.1259025

T. Saito, Y. Arakawa

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引用次数: 0

摘要

采用极化势依赖sp/sup 3/紧密结合的方法，对in /sub 0.2/Ga/sub 0.8/N/GaN和GaN/AlN量子点的电子态进行了原子计算。应变分布采用价力场法，极化诱发电位和场采用有限差分法。我们发现，由于量子点的极化，在量子点中产生了一个强大的内置电场。该场在量子点中引起量子受限的斯塔克效应;即，红移跃迁能和电子和空穴波函数的空间分离。

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Atomistic calculation of electronic states in III-V nitride quantum dots

Atomistic calculations of the electronic states in In/sub 0.2/Ga/sub 0.8/N/GaN and GaN/AlN quantum dots (QDs) have been carried out using a polarization-potential-dependent sp/sup 3/ tight-binding method. A valence-force-field method is used for the strain distribution, and a finite-difference method for the polarization-induced potential and field. We find that a strong built-in electric field is induced in the QDs due to the polarization. The field causes the quantum-confined Stark effect in the QDs; i.e., red-shifted transition energies and a spatial separation of electron and hole wave functions.

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IEEE/LEOS 3rd International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, 2003. Proceedings

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