基于安全记忆器的主存储器

Sachhidh Kannan, Naghmeh Karimi, O. Sinanoglu
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引用次数: 11

摘要

非易失性存储设备,如相变存储器和忆阻器,是SRAM和DRAM主存储器的有希望的替代品,因为它们提供更高的密度和更高的能量效率。然而,非易失性主存储器(NVMM)引入了安全漏洞。驻留在NVMM中的敏感数据(如密码和密钥)将持续存在,并且可以在断电后进行探测。我们提出了基于忆阻器的NVMM的隐路径加密(SPE)。SPE利用物理参数、多级单元(MLC)能力和跨条存储器中的偷偷路径对存储在基于记忆器的NVMM中的数据进行加密。我们研究了三种针对nvmm的攻击,并展示了SPE对它们的弹性。我们使用周期精确模拟器来评估基于SPE的NVMM对安全性和性能的影响。SPE可以以16个周期的延迟和1.5%的性能开销来保护NVMM。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Secure memristor-based main memory
Non-volatile memory devices such as phase change memories and memristors are promising alternatives to SRAM and DRAM main memories as they provide higher density and improved energy efficiency. However, non-volatile main memories (NVMM) introduce security vulnerabilities. Sensitive data such as passwords and keys residing in the NVMM will persist and can be probed after power down. We propose sneak-path encryption (SPE), for memristor-based NVMM. SPE exploits the physical parameters, multi-level cell (MLC) capability and the sneak paths in cross-bar memories to encrypt the data stored in memristor-based NVMM. We investigate three attacks on NVMMs and show the resilience of SPE against them. We use a cycle accurate simulator to evaluate the security and performance impact of SPE based NVMM. SPE can secure the NVMM with a latency of 16 cycles and ~1.5% performance overhead.
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