辐射硬砷化镓微波集成电路设计

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.698873

D. V. Gromov, P.P. Maltcev, A. Nikiforov, S.A. Polevich, S.A. Startcev

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引用次数: 1

摘要

介绍了辐射硬微波集成电路的设计技术。该方法基于考虑MESFET s参数辐射变化的微带线优化过程。在MIC放大器上验证了该技术的有效性。

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Radiation hard GaAs microwave integrated circuits design

The radiation hard microwave integrated circuits (MIC) design technique is presented. The approach is based on the microstrip lines optimization procedure taking into consideration MESFET S-parameters radiation variation. The technique efficiency is demonstrated for MIC amplifier.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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