柔性Vth finfet与9纳米厚极薄盒

2012 IEEE International SOI Conference (SOI) Pub Date : 2012-10-01 DOI:10.1109/SOI.2012.6404371

K. Endo, S. Migita, Y. Ishikawa, Y. Liu, T. Matsukawa, S. O'Uchi, J. Tsukada, W. Mizubayashi, Y. Morita, H. Ota, H. Yamauchi, M. Masahara

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引用次数: 3

摘要

我们首次在世界上最薄的9纳米厚的极薄(ET) BOX SOI衬底上成功制造了第v个可控连接多栅极FinFET。实验证明，通过控制后置(衬底)偏置，ETBOX上FinFET的Vth可以灵活地从低Vth调整到高Vth，同时保持低亚阈值斜率。

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Flexible Vth FinFETs with 9-nm-thick extremely-thin BOX

For the first time, we have successfully fabricated the V_th controllable connected multigate FinFET on the world's thinnest 9-nm-thick extremely thin (ET) BOX SOI substrate. It was experimentally demonstrated that, by controlling the back (substrate) bias, the V_th of the FinFET on the ETBOX is flexibly tuned from low V_th to high V_th with keeping low sub-threshold slope.

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2012 IEEE International SOI Conference (SOI)

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