用于高压电源电路的兆瓦级MOS控制晶闸管

PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference Pub Date : 1992-06-29 DOI:10.1109/PESC.1992.254772

V. Temple, S. Arthur, D. Watrous, R. Dedoncker, H. Mehta

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引用次数: 5

摘要

作者描述了在600- 1200v下相当成熟的第一代pmos控制晶闸管(p - mct)及其第一个成功的3kv器件。单个设备在浪涌中以多兆瓦水平运行。并联或串联设备的模块在接近兆瓦负载时关闭。3 kV MCT在实验谐振型电路中工作，旨在应用于大功率电机驱动。

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Megawatt MOS controlled thyristor for high voltage power circuits

The authors describes first-generation PMOS-controlled thyristors (P-MCTs) that are fairly mature at 600-1200 V and their first successful 3 kV devices. Single devices are shown operating, in surge, at multimegawatt levels. Modules of parallel or series devices have turned off near megawatt loads. The 3 kV MCT is shown operating in an experimental resonant-type circuit aimed at applications in high-power motor drives.<>

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PESC '92 Record. 23rd Annual IEEE Power Electronics Specialists Conference

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