{"title":"用于高频超声应用的具有NS-SAR ADC的区域节能AFE","authors":"Yimin Wu, Shuai Li, L. Luo, Fan Ye, Junyan Ren","doi":"10.1109/APCCAS50809.2020.9301650","DOIUrl":null,"url":null,"abstract":"This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.","PeriodicalId":127075,"journal":{"name":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"An Area-Power-Efficient AFE with NS-SAR ADC For High-Frequency Ultrasound Applications\",\"authors\":\"Yimin Wu, Shuai Li, L. Luo, Fan Ye, Junyan Ren\",\"doi\":\"10.1109/APCCAS50809.2020.9301650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.\",\"PeriodicalId\":127075,\"journal\":{\"name\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"volume\":\"26 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APCCAS50809.2020.9301650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Asia Pacific Conference on Circuits and Systems (APCCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APCCAS50809.2020.9301650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An Area-Power-Efficient AFE with NS-SAR ADC For High-Frequency Ultrasound Applications
This paper presents an integrated ultrasound analog front-end (AFE) featuring wide bandwidth and high area-power-efficiency, which is suitable for high-frequency ultrasound applications. The AFE includes an LNA. VGA, and NS-SAR ADC. The LNA and VGA adopt energy-efficient architecture and achieve more than 100MHz bandwidth. The ADC utilizes a bandpass noise-shaping SAR scheme, improving SNR within the bandwidth of a PMUT transducer. The prototype is fabricated in a 0.18μm HV process, which can further be integrated with HV TX components. The test and simulation results show that this AFE has a channel SNR of 68dB with 28-40dB gain control range and 60MHz sampling rate, occupying 25.68mW power and 0.152 mm2 chip area.
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