纳米开关交叉栅阵列ESD保护结构

2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC) Pub Date : 2013-06-02 DOI:10.1109/RFIC.2013.6569612

X. Wang, Z. Shi, J. Liu, L. Wang, R. Ma, H. Zhao, Z. Dong, C. Zhang, Albert Z. H. Wang

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引用次数: 1

摘要

我们报道了一种新的纳米开关ESD保护机制和双极性Cu/SixOyNz/W纳米交叉棒阵列ESD结构。实验结果表明，具有100pS的快速响应、9A的超低漏损等特点。报道了一种新的分散局部ESD隧道模型和CMOS集成。

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Nano switching crossbar array ESD protection structures

We report a new nano-switching ESD protection mechanism and dual-polarity Cu/SixOyNz/W nano crossbar array ESD structures. Experiments show full ESD protection featuring fast response of 100pS, ultra low leakage of <;2pA and ESD protection of >9A. New dispersed local ESD tunneling model and CMOS integration are reported.

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2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)

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