单事件效应在功率mosfet:物理机制和硬化通过三维模拟

2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS) Pub Date : 2018-07-01 DOI:10.1109/CIRSYSSIM.2018.8525888

Zhu Ming, Wang Tong, Gu Hantian, Qu Ruoyuan, Zhu Hengjing, Z. Wei, Tang Min

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引用次数: 1

摘要

本文论证了三维数值模拟定量研究VDMOS和LDMOS功率晶体管燃尽和锁存效应的可行性和必要性。基于此，本文提出了一种不受SEL影响的新型LDMOS布局。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-Event Effects in Power MOSFETs: Physical Mechanism and Hardening through 3D Simulations

In this paper, we demonstrate the feasibility and necessity of 3D numerical simulation in the quantitative study of burn-out and latch-up effects in VDMOS and LDMOS power transistors. Insight of which lead to a novel LDMOS layout that is immune to SEL proposed in this paper.

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2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS)

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