Jin‐Sung Kim, Kyungwon Moon, Kyu-Sang Shin, M. Jung, Chel-Jong Choi
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Investigation of the current-voltage characteristics of N+/P junction silicon solar cell emitters formed by phosphorus diffusion paste on P-Si substrate
We have investigated the current-voltage characteristics of n+/p junction solar cells formed on p-Si substrate with n+ emitter junction formed by diffusion phosphorus paste by means of furnace annealing. The annealing has been carried out in different ambients. The diode annealed in O2 ambient showed the best rectifying behavior while the diode annealed in Ar showed the least with degradation of rectifying behavior with increase of flow rate.
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