精确的微功率级AB CMOS电压电流转换器

A. López-Martín, Fermin Esparza-Alfaro, J. Ramírez-Angulo, R. Carvajal
{"title":"精确的微功率级AB CMOS电压电流转换器","authors":"A. López-Martín, Fermin Esparza-Alfaro, J. Ramírez-Angulo, R. Carvajal","doi":"10.1109/ECCTD.2011.6043290","DOIUrl":null,"url":null,"abstract":"A CMOS voltage-to-current converter is presented. It is based on a class AB current mirror with very low input resistance and a passive resistor connected to the input for voltage-to-current conversion. Class AB operation is achieved without extra supply voltage requirements or static power consumption, using Quasi-Floating Gate techniques. Measurement results of a differential configuration for a 0.5µm CMOS test chip prototype are presented. A measured harmonic distortion at 1MHz of −59dB is achieved for current signals 20 times larger than the bias currents. The circuit consumes 265µW using a supply voltage of ±1.65V and requires a silicon area of 0.04mm2.","PeriodicalId":126960,"journal":{"name":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Accurate micropower class AB CMOS voltage-to-current converter\",\"authors\":\"A. López-Martín, Fermin Esparza-Alfaro, J. Ramírez-Angulo, R. Carvajal\",\"doi\":\"10.1109/ECCTD.2011.6043290\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A CMOS voltage-to-current converter is presented. It is based on a class AB current mirror with very low input resistance and a passive resistor connected to the input for voltage-to-current conversion. Class AB operation is achieved without extra supply voltage requirements or static power consumption, using Quasi-Floating Gate techniques. Measurement results of a differential configuration for a 0.5µm CMOS test chip prototype are presented. A measured harmonic distortion at 1MHz of −59dB is achieved for current signals 20 times larger than the bias currents. The circuit consumes 265µW using a supply voltage of ±1.65V and requires a silicon area of 0.04mm2.\",\"PeriodicalId\":126960,\"journal\":{\"name\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-10-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 20th European Conference on Circuit Theory and Design (ECCTD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ECCTD.2011.6043290\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 20th European Conference on Circuit Theory and Design (ECCTD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ECCTD.2011.6043290","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

摘要

介绍了一种CMOS电压电流变换器。它基于一个具有极低输入电阻的AB类电流反射镜和一个连接到输入端的无源电阻,用于电压-电流转换。使用准浮动栅极技术,无需额外的电源电压要求或静态功耗即可实现AB级操作。给出了0.5µm CMOS测试芯片样机差分配置的测量结果。对于比偏置电流大20倍的电流信号,在1MHz处测量到−59dB的谐波失真。电路功耗为265µW,电源电压为±1.65V,硅面积为0.04mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate micropower class AB CMOS voltage-to-current converter
A CMOS voltage-to-current converter is presented. It is based on a class AB current mirror with very low input resistance and a passive resistor connected to the input for voltage-to-current conversion. Class AB operation is achieved without extra supply voltage requirements or static power consumption, using Quasi-Floating Gate techniques. Measurement results of a differential configuration for a 0.5µm CMOS test chip prototype are presented. A measured harmonic distortion at 1MHz of −59dB is achieved for current signals 20 times larger than the bias currents. The circuit consumes 265µW using a supply voltage of ±1.65V and requires a silicon area of 0.04mm2.
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