1550nm波长的双尖端氮化钪铝边缘耦合器

2022 IEEE 7th Optoelectronics Global Conference (OGC) Pub Date : 2022-12-06 DOI:10.1109/OGC55558.2022.10051030

Hengyu Wang, Xingyan Zhao, Shaonan Zheng, Zhengji Xu, Yuan Dong, Ting Hu

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引用次数: 0

摘要

设计了三种不同Sc浓度(x = 0, 0.09, 0.23)的双尖端氮化钪铝(Al1-xScxN)边耦合器，工作波长为1550 nm。采用粒子群优化算法对器件的几何参数进行优化。结果表明，在相同尖端宽度和器件长度的情况下，双尖端边缘耦合器在横向电(TE)和横向磁(TM)模式下的耦合效率都高于单尖端边缘耦合器。

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Double-tip Scandium Aluminum Nitride Edge Couplers at 1550 nm Wavelength

Double-tip scandium aluminum nitride (Al1-xScxN) edge couplers with three different Sc concentrations (x = 0, 0.09, 0.23) working at 1550 nm wavelength are designed. The geometric parameters of the devices are optimized by the particle swarm optimization (PSO) algorithm. It is shown that the double-tip edge couplers have higher coupling efficiencies for both transverse-electric (TE) and transverse-magnetic (TM) modes compared with the single-tip ones with the same tip width and device length.

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2022 IEEE 7th Optoelectronics Global Conference (OGC)

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