S. Chitrashekaraiah, C. N. Dharmasiri, A. Rezazadeh
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An automated small-signal parameter extraction technique for HBTs using ICCAP
This work presents an automated toolkit for the extraction of small-signal parameters of heterojunction bipolar transistors (HBTs) using Agilent's IC evaluation characterisation and analysis program (ICCAP). On-wafer S-parameters of a 16/spl times/20 /spl mu/m/sup 2/ InGaP/GaAs double HBT (DHBT) for different bias conditions are measured and analysed over a wide temperature range, -25/spl deg/C to +110/spl deg/C. These measured data are used in the extraction of small-signal parameters and compared with ADS simulations to verify and validate the developed small-signal extraction toolkit.
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