{"title":"基于GaN HEMT的大功率有源集成天线的研制","authors":"Rakhi Kumari, A. Basu, S. Koul","doi":"10.1109/IMaRC.2018.8877316","DOIUrl":null,"url":null,"abstract":"A GaN HEMT based high power Amplifier type Active Integrated Antenna (AIA) is demonstrated at 2.4 GHz. First a Power Amplifier is designed, fabricated and measured. It gives 40.8 dBm output power, 62% drain efficiency and 56% power added efficiency. Second, Active Integrated Antenna is designed, fabricated and measured. Input impedance of antenna is selected in such a way that output matching network is eliminated from the power amplifier circuit. Patch antenna serves function of output matching network, load and radiator. Effective Isotropic Radiated Power (EIRP) of AIA is 49.185 dBm. Overall gain of AIA is 22.18 dB. To the best of the authors knowledge this is the highest EIRP achieved with single transistor amplifier type AIA.","PeriodicalId":201571,"journal":{"name":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Development of GaN HEMT based High Power Active Integrated Antenna\",\"authors\":\"Rakhi Kumari, A. Basu, S. Koul\",\"doi\":\"10.1109/IMaRC.2018.8877316\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A GaN HEMT based high power Amplifier type Active Integrated Antenna (AIA) is demonstrated at 2.4 GHz. First a Power Amplifier is designed, fabricated and measured. It gives 40.8 dBm output power, 62% drain efficiency and 56% power added efficiency. Second, Active Integrated Antenna is designed, fabricated and measured. Input impedance of antenna is selected in such a way that output matching network is eliminated from the power amplifier circuit. Patch antenna serves function of output matching network, load and radiator. Effective Isotropic Radiated Power (EIRP) of AIA is 49.185 dBm. Overall gain of AIA is 22.18 dB. To the best of the authors knowledge this is the highest EIRP achieved with single transistor amplifier type AIA.\",\"PeriodicalId\":201571,\"journal\":{\"name\":\"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMaRC.2018.8877316\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE MTT-S International Microwave and RF Conference (IMaRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMaRC.2018.8877316","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Development of GaN HEMT based High Power Active Integrated Antenna
A GaN HEMT based high power Amplifier type Active Integrated Antenna (AIA) is demonstrated at 2.4 GHz. First a Power Amplifier is designed, fabricated and measured. It gives 40.8 dBm output power, 62% drain efficiency and 56% power added efficiency. Second, Active Integrated Antenna is designed, fabricated and measured. Input impedance of antenna is selected in such a way that output matching network is eliminated from the power amplifier circuit. Patch antenna serves function of output matching network, load and radiator. Effective Isotropic Radiated Power (EIRP) of AIA is 49.185 dBm. Overall gain of AIA is 22.18 dB. To the best of the authors knowledge this is the highest EIRP achieved with single transistor amplifier type AIA.
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