一种由无结n-FinFET组成的新型CMOS结构,具有相同的n-通道和公共栅极

Xinlong Shi, Huiyong Hu, Ying Wang, Liming Wang, Bin Wang, Ningning Zhang
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引用次数: 0

摘要

本文提出了一种具有相同n通道和相同栅极功函数的新型CMOS逆变器。这种新结构由无结n-FinFET和反转模式p-FinFET组成。与传统的CMOS逆变器相比,新型CMOS器件可以在相同的SOI衬底上使用相同的栅极材料制造,简化了制造工艺,降低了制造成本。采用亚5nm技术节点的三维数值模拟方法对CMOS逆变器的逻辑性能进行了评估。与IM n-FinFET相比,JL n-FinFET的ION/ IOFF比提高到3.8%,固有增益提高到4.8%。与传统CMOS逆变器相比,新型CMOS逆变器的上升时间、下降时间和反相频率分别提高了1.8%、8.5%和7.6%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel CMOS Structure Composed of Junctionless n-FinFET with the Same n-Channel and Common Gate
In this paper, a novel CMOS inverter with the same n-channel and same gate work function has been proposed. This new structure is composed of junctionless (JL) n-FinFET and inversion-mode (IM) p-FinFET. Compared with the conventional CMOS inverter, the novel CMOS device can be fabricated on the same SOI substrates with the same gate material, which simplifies the fabrication process and reduces fabrication costs. The logic performance of CMOS inverters is evaluated using 3D numerical simulation at sub-5 nm technology nodes.The ION/ IOFF ratio of the JL n-FinFET improved up to 3.8%, the intrinsic gain improved up to 4.8% as compared to the IM n-FinFET. The rise time, fall time and RO frequency of the novel CMOS inverter are improved up to 1.8%, 8.5% and 7.6% respectively, compared with the traditional CMOS inverter.
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