{"title":"k波段应用的高效宽带二极管混频器","authors":"A. Sellidj, S. Gaoua, M. Yagoub","doi":"10.1109/ICAEE53772.2022.9961974","DOIUrl":null,"url":null,"abstract":"In this work, an efficient k-band diode mixer was designed in TSMC CMOS 180 nm technology. It works in the frequency range of 17-28 GHz with a conversion loss of 7.5 dB for an IF frequency of 3 GHz and a local oscillator power of 15 dBm. It exhibits an isolation better than 30 dB between the input LO and RF ports and the IF output port. Furthermore, the proposed mixer shows low conversion loss particularly for high IF frequencies.","PeriodicalId":206584,"journal":{"name":"2022 2nd International Conference on Advanced Electrical Engineering (ICAEE)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Efficient Wideband Diode Mixer for k-Band Applications\",\"authors\":\"A. Sellidj, S. Gaoua, M. Yagoub\",\"doi\":\"10.1109/ICAEE53772.2022.9961974\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, an efficient k-band diode mixer was designed in TSMC CMOS 180 nm technology. It works in the frequency range of 17-28 GHz with a conversion loss of 7.5 dB for an IF frequency of 3 GHz and a local oscillator power of 15 dBm. It exhibits an isolation better than 30 dB between the input LO and RF ports and the IF output port. Furthermore, the proposed mixer shows low conversion loss particularly for high IF frequencies.\",\"PeriodicalId\":206584,\"journal\":{\"name\":\"2022 2nd International Conference on Advanced Electrical Engineering (ICAEE)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 2nd International Conference on Advanced Electrical Engineering (ICAEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICAEE53772.2022.9961974\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 2nd International Conference on Advanced Electrical Engineering (ICAEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICAEE53772.2022.9961974","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Efficient Wideband Diode Mixer for k-Band Applications
In this work, an efficient k-band diode mixer was designed in TSMC CMOS 180 nm technology. It works in the frequency range of 17-28 GHz with a conversion loss of 7.5 dB for an IF frequency of 3 GHz and a local oscillator power of 15 dBm. It exhibits an isolation better than 30 dB between the input LO and RF ports and the IF output port. Furthermore, the proposed mixer shows low conversion loss particularly for high IF frequencies.
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