消除高相关增益功率x波段内部匹配晶体管的寄生产生

2008 18th International Crimean Conference - Microwave & Telecommunication Technology Pub Date : 2008-11-18 DOI:10.1109/CRMICO.2008.4676297

A. Galdetskiy, L. V. Manchenko, A. B. Pashkovskiĭ, V. Pchelin

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引用次数: 0

摘要

讨论了输出功率大于10w、相关增益大于13db的x波段内匹配hemsilas的稳定性问题。提出了几种消除寄生产生的原理图设计。

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Elimination of parasitic generation in power X-band internally matched transistors with high associated gain

Stability problems for X-band internally matched HEMTpsilas with output power higher than 10 W, associated gain higher than 13 dB are discussed. Several variants of schematic design for parasitic generation elimination are proposed.

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2008 18th International Crimean Conference - Microwave & Telecommunication Technology

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