封装介质复介电常数从w波段到d波段的提取

Yi-Ting Lin, H. Kuo, Po-I Wu, Ming-Fong Jhong, Po-Chih Pan, Chung-Yuan Liu, Chen-Chao Wang, Tzong-Lin Wu
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引用次数: 1

摘要

本文提出了一种简单的提取介质材料的方法,并考虑了铜的表面粗糙度。从w波段到d波段的测量结果验证了提取介质复介电常数的方法。此外,为了验证所提出的传输线技术,还测量了具有适当的“穿透反射线”(TRL)校准模式的全套复s参数。它还允许准确地测定介电常数和薄片衬底材料的损耗。传输线无标定技术与TRL标定方法一致性好,系统误差小。此外,对同一套封装内的不同样品进行了测量,并提取了介电常数和损耗正切,结果吻合较好。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Extraction of Complex Permittivity of Dielectrics on Package from W-band to D-band
In this paper, a simple method of extracting dielectric material is proposed and copper surface roughness is taken into consideration. The measured results from W-band to D-band are shown to verify the proposed method of extracting complex permittivity of dielectrics. Besides, to validate the proposed transmission line technique, the full sets of complex S-parameters with an appropriate “through-reflect-line” (TRL) calibration pattern are measured as well. It also allows accurate determination of the dielectric constant and loss of thin sheet substrate materials. A great consistency between transmission line technique without calibration and TRL calibration method represents that systematic errors are small. In addition, different samples within the same set of packaging are measured and used to extract dielectric constant and loss tangent, which agree well with each other.
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