BSO中的光折变电荷迁移:带输运和跳变模型的比较

M. Krainak
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引用次数: 0

摘要

人们对光折变效应的电荷输运机制一直很感兴趣,特别是在硅微体(BSO, BGO, BTO)1,2中。光激发电荷迁移有两种流行的模型,即能带输运理论和跳变模型3。本文对跳频和带输运模型进行了详细的比较。我们将跳频模型与带输运模型放在同一个框架中。然后对跳变模型进行修改,使其包含一个与外电场相关的时间常数。这允许在外部施加交变电场的条件下,发展出总电空间电荷场的表达式。该表达式在电磁耦合波理论中用于预测两波混频增益。然后对实验结果和理论结果进行了比较。并对交流光电性的实验结果和理论预测进行了比较。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Photorefractive charge migration in BSO: A comparison of the band transport and hopping models
There is a continued interest in the charge transport mechanism for the photorefractive effect, particularly in the sillenites (BSO, BGO, BTO)1,2. There are two prevalent models for the photoexcited charge migration, namely, the band transport theory and the hopping model3. In this paper we present a detailed comparison of the hopping and band transport models. We place the hopping model in the same framework as the band transport model. The hopping model is then modified to include an external electric field dependent time constant. This allows the development of an expression for the total electric space charge field for the condidtion of an externally applied alternating electric field. This expression is used in the electromagnetic coupled wave theory to predict the two wave mixing gain. Experimental and theoretical results are then compared. AC photoconductivity experimental results and theoretical predictions are also presented and compared.
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