温度对低电压应用延迟的影响[CMOS ic]

J. Daga, E. Ottaviano, D. Auvergne
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引用次数: 33

摘要

本文首次分析了低电压下CMOS集成电路延迟的温度依赖性。基于一个低压扩展Sakurai /spl α /功率电流律,详细分析了CMOS结构延迟的温度和电压敏感性。温度和电压之间的耦合效应被清楚地证明。特定的降额因子定义为低电压范围(1-3 V/sub TO/)。通过将测量的温度和电压振荡周期与计算的温度和电压振荡周期进行比较,在0.7 /spl mu/m工艺上集成了特定的环形振荡器,得到了实验验证。低温敏感性工作区域已被清楚地确定,并与预期的计算值表现出极好的一致性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Temperature effect on delay for low voltage applications [CMOS ICs]
This paper presents one of the first analysis of the temperature dependence of CMOS integrated circuit delay at low voltage. Based on a low voltage extended Sakurai's /spl alpha/-power current law, a detail analysis of the temperature and voltage sensitivity of CMOS structure delay is given. Coupling effects between temperature and voltage are clearly demonstrated. Specific derating factors are defined for the low voltage range (1-3 V/sub TO/). Experimental validations are obtained on specific ring oscillators integrated on a 0.7 /spl mu/m process by comparing the temperature and voltage evolution of the measured oscillation period to the calculated ones. A low temperature sensitivity operating region has been clearly identified and appears in excellent agreement with the expected calculated values.
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