{"title":"IREM用于检测65nm产品的高阻故障","authors":"I. Wan, D. Bockelman, Yun Xuan, S. Chen","doi":"10.1109/IRWS.2005.1609577","DOIUrl":null,"url":null,"abstract":"Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where \"abnormal\" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.","PeriodicalId":214130,"journal":{"name":"2005 IEEE International Integrated Reliability Workshop","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"IREM usage in the detection of highly resistive failures on 65nm products\",\"authors\":\"I. Wan, D. Bockelman, Yun Xuan, S. Chen\",\"doi\":\"10.1109/IRWS.2005.1609577\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where \\\"abnormal\\\" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.\",\"PeriodicalId\":214130,\"journal\":{\"name\":\"2005 IEEE International Integrated Reliability Workshop\",\"volume\":\"8 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-10-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Integrated Reliability Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRWS.2005.1609577\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Integrated Reliability Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRWS.2005.1609577","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
IREM usage in the detection of highly resistive failures on 65nm products
Infra-red emission microscopy (IREM) has been widely used for physical isolation of several defect mechanisms where "abnormal" photon/thermal emissions are generated. Failures caused by metal shorts, contending nodes or electrical overstress are some of the issues that affect the normal operation of a circuit and result in intense emissions in the near infra-red (NIR) spectrum. IREM has proven successful in locating these faults and in this paper, we expand the usage of this tool by showing its effectiveness in the detection of failures caused by highly resistive nodes. We establish this idea with circuit simulation results and show real Si data that was seen on 65nm process technology products.
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