Optimizations of Negative Capacitance Independent Dual-Gate FinFETs

In this paper, we introduce a novel negative-capacitance device, named as negative-capacitance independent dual-gate FinFETs (NC-IDG-FinFETs) that can reduce the number of transistors used in circuit designs. We stack thin ferroelectric (FE) layers into the two gate stacks of baseline traditional independent dual-gate FinFET devices. We chose HfSiO (with the typical anisotropy constants of $\alpha_{FE}=-8.65\mathrm{e}10$ cm/F, $\beta_{FE}=1.92\mathrm{e}20$ cm5/ F/C2, and $\gamma_{FE}=0$ cm9/F/C4) as the material with negative capacitance effect. The high-K dielectric Hf02 is used between the FE layer and the channel. We optimize the turn-on currents, leakage currents, and the switching current ratio by adjusting ferroelectric thickness. Simulation results show that the proposed devices can increase the on-state current and decrease the leakage current, and increase the switching current ratio.