0.5W s波段两级功率放大器的研究、设计与实现

2018 2nd International Conference on Recent Advances in Signal Processing, Telecommunications & Computing (SigTelCom) Pub Date : 1900-01-01 DOI:10.1109/SIGTELCOM.2018.8325804

Doan Van Truong, Linh Mai, Van-Su Tran, Nguyễn Bình Dương, Hung Ngoc Do

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引用次数: 0

摘要

本文研究设计一种工作在s波段的功率放大器，将低功率射频信号放大为高功率信号。采用射频晶体管BFP740和GaAs场效应管MGF2430A。PA包括两个级，有驱动级和动力级。在2.9 GHz中心频率下，带宽为400 MHz的两级扩音器被设计为具有所需的规格。在设计的两级放大器中，正向增益大于25 dB，功率附加效率(PAE)大于驱动级和功率级之和的20%。输出功率达到27dbm。输入/输出反射系数小于−10db。

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0.5W S-band two-stage power amplifier: Research, design and implementation

This paper describes the study of designing a power amplifier (PA) operating at S-band which amplifies a low power radio frequency (RF) signals into a higher power signals. The RF transistor BFP740 and GaAs FET MGF2430A are used in this work. The PA includes two stages which have both driver and power stages. The two-stage PA with the bandwidth of 400 MHz at 2.9 GHz center frequency is designed to have the desired specifications. In the designed two-stage PA, the forward gain is over 25 dB and power-added efficiency (PAE) is rather than 20% of combining driver and power stages. Besides, the output power obtains 27 dBm in total. The input/output coefficient reflections are less than −10 dB.

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2018 2nd International Conference on Recent Advances in Signal Processing, Telecommunications & Computing (SigTelCom)

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