{"title":"开极开关对高压功率晶体管关断特性的影响","authors":"B. Jackson, Dan Y. Chen","doi":"10.1109/PESC.1980.7089442","DOIUrl":null,"url":null,"abstract":"Test results have shown that using Emitter-Open switching turn-off scheme, the storage time and the fall time of a high-voltage power transistor can be reduced by a factor of at least 2. In addition, the effects of reverse-bias second breakdown are essentially eliminated up to the VCBO and IDC of the device.","PeriodicalId":227481,"journal":{"name":"1980 IEEE Power Electronics Specialists Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Effects of Emitter-Open switching on the turn-off characteristics of high-voltage power transistors\",\"authors\":\"B. Jackson, Dan Y. Chen\",\"doi\":\"10.1109/PESC.1980.7089442\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Test results have shown that using Emitter-Open switching turn-off scheme, the storage time and the fall time of a high-voltage power transistor can be reduced by a factor of at least 2. In addition, the effects of reverse-bias second breakdown are essentially eliminated up to the VCBO and IDC of the device.\",\"PeriodicalId\":227481,\"journal\":{\"name\":\"1980 IEEE Power Electronics Specialists Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-06-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1980 IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1980.7089442\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1980.7089442","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of Emitter-Open switching on the turn-off characteristics of high-voltage power transistors
Test results have shown that using Emitter-Open switching turn-off scheme, the storage time and the fall time of a high-voltage power transistor can be reduced by a factor of at least 2. In addition, the effects of reverse-bias second breakdown are essentially eliminated up to the VCBO and IDC of the device.
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