CMOS 0.25µm技术室温下总电离剂量硬度增强

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857680

G. Cussac, L. Artola, T. Nuns, S. Ducret

{"title":"CMOS 0.25µm技术室温下总电离剂量硬度增强","authors":"G. Cussac, L. Artola, T. Nuns, S. Ducret","doi":"10.1109/RADECS50773.2020.9857680","DOIUrl":null,"url":null,"abstract":"This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.","PeriodicalId":371838,"journal":{"name":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology\",\"authors\":\"G. Cussac, L. Artola, T. Nuns, S. Ducret\",\"doi\":\"10.1109/RADECS50773.2020.9857680\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.\",\"PeriodicalId\":371838,\"journal\":{\"name\":\"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS50773.2020.9857680\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS50773.2020.9857680","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

本文介绍了一次辐照和二次辐照的MOSFET晶体管的电学特性。其次，经辐照后的晶体管在标称运算恢复后，其阻抗有较大的改善。这种改进是由于在长时间退火过程中潜在的界面陷阱电荷的积累。通过仿真和实验对比，从物理上解释了潜在界面陷阱对STI水平电退化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Total Ionizing Dose Hardness Enhancement at Room Temperature in CMOS 0.25µm Technology

This work presents electricals characteristics of primary and secondly irradiated MOSFET transistors. Secondly irradiated transistors after nominal operation recovery showed a great TID resistance betterment. This improvement is allowed by latent interface traps charge build-up during long time annealing. Latent interface traps effects on electrical degradation at STI level are physically explained with simulation and experiment comparison.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

自引率

0.00%

发文量