分数阶正弦振荡器,仅使用单个运算跨阻放大器

Manoj Kumar, D. Bhaskar, Pragati Kumar
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引用次数: 0

摘要

本文提出了一种由两个分数阶电容(FC)、四个电阻和一个运算跨阻放大器(OTRA)组成的分数阶正弦振荡器(FSO)。利用节点分析方法推导了分数阶振荡器的特性方程,得到了振荡频率、振荡条件和输出电压相位差的表达式。在一种特殊情况下,当α = β = 1.0时,电路表现为经典的单电阻控制正弦振荡器(SRCO),其中振荡频率和振荡条件可以通过单独的电阻来改变。即使α和β的值在0 < α, β < 1的范围内,这些性质也保持不变。由于OTRA的输入端实际上是接地的,因此所提出的振荡器电路对寄生输入电容和输入电阻也不敏感。采用单个OTRA(由采用TMSC 0.18 μm技术的CMOS晶体管构成)和采用Valsa、Dovrak和Friedl提出的方法实现的分式电容器,通过PSPICE仿真结果验证了所提出结构的可操作性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Fractional Order Sinusoidal Oscillator Using only a Single Operational Trans-resistance Amplifier
In this paper a fractional order sinusoidal oscillator (FSO) implemented with two fractional capacitors (FC), four resistors and a single operational trans-resistance amplifier (OTRA) has been presented. The characteristic equation of proposed fractional order oscillator has been derived using nodal analysis and the expressions for frequency of oscillation, condition of oscillation and phase difference between the output voltages are obtained. In one special case, when α = β = 1.0, the circuit behaves as a classical single resistance controlled sinusoidal oscillator (SRCO) in which the frequency of oscillation and the condition of oscillation can be varied through separate resistors. These properties are retained even when the value of α and β lie in the range of 0 < α, β < 1. Since the input terminals of OTRA are at virtually ground, the proposed oscillator circuit is also insensitive to parasitic input capacitances and input resistances. The workability of proposed structure has been verified with PSPICE simulation results using a single OTRA (constructed with CMOS transistors using TMSC 0.18 μm technology) and fractional capacitors realized using the method proposed by Valsa and Dovrak and Friedl.
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