测试用于表征CMOS/大块存储器中α粒子轨迹的sram

Proceedings of the 1991 International Conference on Microelectronic Test Structures Pub Date : 1990-03-18 DOI:10.1109/ICMTS.1990.161723

M. Buehler, B. Blaes, G. Soli

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引用次数: 6

摘要

描述了一种在测试sram(静态随机存取存储器)中使用α粒子来提供扰动敏感区域横截面的独立测量的方法。此外，还确定了覆盖层厚度和α -粒子收集深度。这些参数对于精确估计由于宇宙射线撞击造成的记忆破坏率是必要的。在用Am-241 α粒子源辐照的1.6 μ m n孔CMOS 4kb测试sram上进行了测量。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Test SRAMs for characterizing alpha particle tracks in CMOS/bulk memories

Describes a methodology for using alpha particles to provide an independent measure of the cross section of an upset sensitive region in test SRAMs (static random-access memories). In addition, the thickness of over-layers and the alpha-particle collection depth were determined. These parameters are necessary in order to make precise estimates of the upset rates of memories due to cosmic-ray strikes. Measurements were made on 1.6- mu m n-well CMOS 4-kb test SRAMs irradiated with an Am-241 alpha-particle source.<>

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Proceedings of the 1991 International Conference on Microelectronic Test Structures

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