{"title":"一种十进带宽电阻性场效应管单平衡MIC混频器","authors":"Chi-Yang Chang, Chu-Chen Yang, D. Niu","doi":"10.1109/MWSYM.1999.779482","DOIUrl":null,"url":null,"abstract":"A novel decade bandwidth resistive FET singly balanced MIC mixer using a broadband CPW to CPS balun is developed. The mixer uses two NEC71000 MESFETs and realized with uniplanar lines. At 17 dBm LO power and 1 GHz IF, the mixer shows a conversion loss of 5.7 to 11 dB for 2 to 20 GHz RF and 10 to 15 dB for 20 to 27 GHz RF. The IF bandwidth is from 10 MHz to 7 GHz. The signal orthogonality between RF and IF makes the IF signal may overlap the RF signal. The mixer shows an output P/sub 1/ /sub dB/ of 11.5 dBm (corresponding to input P/sub 1/ /sub dB/ of 18.5 dBm) at 8 GHz RF, 1 GHz IF and 16.5 dBm LO power. The input IF, is 24 to 37 dBm corresponding to 2.5 to 20 GHz RF and 1 GHz IF. The mixer is fabricated on a 15 mil thick Al/sub 2/O/sub 3/ MIC substrate.","PeriodicalId":226779,"journal":{"name":"Intelligent Memory Systems","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"A decade bandwidth resistive FET singly balanced MIC mixer\",\"authors\":\"Chi-Yang Chang, Chu-Chen Yang, D. Niu\",\"doi\":\"10.1109/MWSYM.1999.779482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel decade bandwidth resistive FET singly balanced MIC mixer using a broadband CPW to CPS balun is developed. The mixer uses two NEC71000 MESFETs and realized with uniplanar lines. At 17 dBm LO power and 1 GHz IF, the mixer shows a conversion loss of 5.7 to 11 dB for 2 to 20 GHz RF and 10 to 15 dB for 20 to 27 GHz RF. The IF bandwidth is from 10 MHz to 7 GHz. The signal orthogonality between RF and IF makes the IF signal may overlap the RF signal. The mixer shows an output P/sub 1/ /sub dB/ of 11.5 dBm (corresponding to input P/sub 1/ /sub dB/ of 18.5 dBm) at 8 GHz RF, 1 GHz IF and 16.5 dBm LO power. The input IF, is 24 to 37 dBm corresponding to 2.5 to 20 GHz RF and 1 GHz IF. The mixer is fabricated on a 15 mil thick Al/sub 2/O/sub 3/ MIC substrate.\",\"PeriodicalId\":226779,\"journal\":{\"name\":\"Intelligent Memory Systems\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Intelligent Memory Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1999.779482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Intelligent Memory Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1999.779482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A decade bandwidth resistive FET singly balanced MIC mixer
A novel decade bandwidth resistive FET singly balanced MIC mixer using a broadband CPW to CPS balun is developed. The mixer uses two NEC71000 MESFETs and realized with uniplanar lines. At 17 dBm LO power and 1 GHz IF, the mixer shows a conversion loss of 5.7 to 11 dB for 2 to 20 GHz RF and 10 to 15 dB for 20 to 27 GHz RF. The IF bandwidth is from 10 MHz to 7 GHz. The signal orthogonality between RF and IF makes the IF signal may overlap the RF signal. The mixer shows an output P/sub 1/ /sub dB/ of 11.5 dBm (corresponding to input P/sub 1/ /sub dB/ of 18.5 dBm) at 8 GHz RF, 1 GHz IF and 16.5 dBm LO power. The input IF, is 24 to 37 dBm corresponding to 2.5 to 20 GHz RF and 1 GHz IF. The mixer is fabricated on a 15 mil thick Al/sub 2/O/sub 3/ MIC substrate.
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