在饱和区使用SiGe hbt的w波段低功率毫米波低噪声放大器

2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2019-01-01 DOI:10.1109/SIRF.2019.8709134

A. Mukherjee, W. Liang, P. Sakalas, A. Pawlak, M. Schröter

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引用次数: 7

摘要

先进的SiGe hbt即使在正向偏置基极-集电极结处也能保持相当合理的性能。在饱和状态下的相关操作可以显著降低功耗。这项工作的一个目标是探索具有最低功耗的毫米波电路，同时保持合理的性能，以便可能集成到对电池寿命至关重要的移动系统中。第二个目标是在饱和和实际电路运行下对HBT紧凑模型进行评估。本文给出了工作在w波段的窄带和宽带低噪声放大器(LNA)的测量和仿真结果。窄带LNA的供电电压低至0.5V。

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W-band low-power millimeter-wave low noise amplifiers (LNAs)using SiGe HBTs in saturation region

Advanced SiGe HBTs maintain quite reasonable performance even at a forward biased base-collector junction. The associated operation in saturation enables a significant reduction in power consumption. One goal of this work is the exploration of mm-wave circuits with lowest possible power consumption while maintaining reasonable performance for possible integration into mobile systems where battery lifetime is of utmost importance. A second goal is the evaluation of HBT compact models in saturation and under realistic circuit operation. This paper presents the measured and simulated results of a narrow-band and a wide-band low-noise amplifier (LNA), both operating in the W-band. The supply voltage of the narrow-band LNA is as low as 0.5V.

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2019 IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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