深亚微米MOSFET电路的新型仿真

Proceedings International Conference on Computer Design VLSI in Computers and Processors Pub Date : 1997-10-12 DOI:10.1109/ICCD.1997.628850

S. Bruma, R. Otten

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引用次数: 2

摘要

将MOSFET尺寸缩小到深亚微米范围的影响导致可以用局部线性方程建模的工作区域。分段线性模拟器似乎是显而易见的选择。为了成功地操作所提出的MOSFET模型，PL模拟器必须满足某些要求。仿真结果证明了该方法在模拟大型深亚微米MOSFET电路方面的有效性。由于统一的PL建模技术，可以模拟多个层次结构。

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Novel simulation of deep-submicron MOSFET circuits

The effects of scaling down the MOSFET dimensions to the deep-submicron range lead to operating regions that may be modeled by locally linear equations. The piecewise linear simulator seems to be the obvious choice. Certain requirements must be satisfied by a PL simulator for the successful manipulation of the proposed MOSFET model. Simulation results demonstrate the efficiency in simulating large deep-submicron MOSFET circuits. Several levels of hierarchy can be simulated due to the uniform PL modeling technique.

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Proceedings International Conference on Computer Design VLSI in Computers and Processors

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