基于x波段LNA小信号测量的GaN JFET抗噪声估计

2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) Pub Date : 2020-06-01 DOI:10.23919/MIXDES49814.2020.9155884

E. Karagianni, C. Lessi, C. Vazouras, A. Panagopoulos, G. Deligeorgis, G. Stavrinidis, A. Kostopoulos

{"title":"基于x波段LNA小信号测量的GaN JFET抗噪声估计","authors":"E. Karagianni, C. Lessi, C. Vazouras, A. Panagopoulos, G. Deligeorgis, G. Stavrinidis, A. Kostopoulos","doi":"10.23919/MIXDES49814.2020.9155884","DOIUrl":null,"url":null,"abstract":"Gallium Nitride technology is entering dynamically in the area of manufacturing integrated circuits. In this paper the design of a Low Noise Amplifier is presented. The transistor that is used is a bilateral, conditionally stable transistor and it has been built at the Foundation for Research and Technology Hellas. It is measured in order to get the Scattering parameters and the Noise Figure. The Noise Figure is additionally calculated, together with the noise resistance and the error between the calculated and the measured values is estimated for a single stage amplifier.","PeriodicalId":145224,"journal":{"name":"2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Noise Resistance Estimation for a GaN JFET Using Small Signal Measurements for an X-band LNA\",\"authors\":\"E. Karagianni, C. Lessi, C. Vazouras, A. Panagopoulos, G. Deligeorgis, G. Stavrinidis, A. Kostopoulos\",\"doi\":\"10.23919/MIXDES49814.2020.9155884\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Nitride technology is entering dynamically in the area of manufacturing integrated circuits. In this paper the design of a Low Noise Amplifier is presented. The transistor that is used is a bilateral, conditionally stable transistor and it has been built at the Foundation for Research and Technology Hellas. It is measured in order to get the Scattering parameters and the Noise Figure. The Noise Figure is additionally calculated, together with the noise resistance and the error between the calculated and the measured values is estimated for a single stage amplifier.\",\"PeriodicalId\":145224,\"journal\":{\"name\":\"2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/MIXDES49814.2020.9155884\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/MIXDES49814.2020.9155884","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

氮化镓技术在集成电路制造领域正蓬勃发展。本文介绍了一种低噪声放大器的设计。所使用的晶体管是一个双边的，有条件稳定的晶体管，它是在希腊研究和技术基金会建造的。对其进行了测量，得到了散射参数和噪声图。此外，还计算了噪声系数，并对单级放大器的噪声阻力和计算值与实测值之间的误差进行了估计。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Noise Resistance Estimation for a GaN JFET Using Small Signal Measurements for an X-band LNA

Gallium Nitride technology is entering dynamically in the area of manufacturing integrated circuits. In this paper the design of a Low Noise Amplifier is presented. The transistor that is used is a bilateral, conditionally stable transistor and it has been built at the Foundation for Research and Technology Hellas. It is measured in order to get the Scattering parameters and the Noise Figure. The Noise Figure is additionally calculated, together with the noise resistance and the error between the calculated and the measured values is estimated for a single stage amplifier.

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2020 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES)

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