基于集成电路技术的4-T像元结构探测器像素电路优化降噪

Johan Venter, S. Sinha
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引用次数: 1

摘要

集成电路技术中最常用的像元结构是三晶体管像元结构(3-T)。该结构由一个像素、一个复位晶体管、一个源跟随器和一个像素选择晶体管组成。扩展到这是4-T像素结构,其中包括一个额外的晶体管,使在读出阶段和复位阶段的电流转向。与传统的3-T像素结构相比,这大大降低了电流消耗。仿真结果描述了这种优化,以支持本文的技术贡献。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Noise reduction by pixel circuit optimization in 4-T pixel structure detectors using integrated circuit technologies
The most commonly used pixel structure in integrated circuit technologies is the three-transistor pixel structure (3-T). This structure consists of a pixel, a reset transistor, a source follower and a pixel select transistor. An extension to this is the 4-T pixel structure where an extra transistor is included to enable current steering in the readout phase and reset phase. This greatly reduces current consumption compared to the conventional 3-T pixel structure. Simulation results depicting this optimization is provided to support the technical contribution of this paper.
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