用于LMDS的PHEMT MMIC宽带功率放大器

Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194) Pub Date : 1998-08-09 DOI:10.1109/RAWCON.1998.709151

Young-Gi Kim, S. Maeng, Jin-Hee Lee, Chul-Soon Park

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引用次数: 5

摘要

研制了一种基于AlGaAs/InGaAs/GaAs伪晶高电子迁移率晶体管(PHEMT)的两级单片微波集成电路(MMIC)宽带功率放大器，用于24 /spl sim/ 28ghz频率范围内的本地多点配电系统(LMDS)的上行和下行应用。该放大器在24.5 GHz和27.1 GHz时的信号增益分别为18.6 dB和16.7 dB。在24.5 GHz和27.1 GHz分别实现了19.8 dBm和19.8%的PAE输出功率和18.8 dBm输出功率。

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A PHEMT MMIC broad-band power amplifier for LMDS

A two-stage monolithic microwave integrated circuits (MMIC) broad-band power amplifier with AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) has been developed for the up-link and down-link applications for local multipoint distribution systems (LMDS) in the frequency range of 24 /spl sim/28 GHz. The amplifier has a small signal gain of 18.6 dB at 24.5 GHz and 16.7 dB at 27.1 GHz. It achieved output powers of 19.8 dBm with PAE of 19.8% at 24.5 GHz and 18.8 dBm at 27.1 GHz.

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Proceedings RAWCON 98. 1998 IEEE Radio and Wireless Conference (Cat. No.98EX194)

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