用模拟记忆器件实现忆阻器辅助逻辑门

Hao Cai, Ziang Chen, Xianyue Zhao, C. Bengel, Feng Liu, Heidemarie Schmidt, S. Menzel, Nan Du
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引用次数: 0

摘要

基于von Neumann架构的计算受到计算单元和存储器之间数据传输的困扰,即所谓的von-Neumann瓶颈。因此,利用内存计算(IMC)出现了新的计算范式。状态忆阻器辅助逻辑(MAGIC)是近年来备受关注的一种方法,它可以在忆阻存储器阵列中实现功能完备的布尔逻辑函数集。而典型的数字开关忆阻器件被利用,在这项工作中,我们研究使用模拟开关BiFeO3 (BFO)器件实现MAGIC门。仿真结果表明,用于数字开关记忆器件的MAGIC NIMP门不能正确地与模拟BFO器件一起工作。通过研究MAGIC NIMP门工作时的输入漂移和阻塞效应,我们利用模拟忆阻器提出了两种替代MAGIC门,即NOR门和-P门。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Realization of Memristor-aided Logic Gates with Analog Memristive Devices
Computation based on the von Neumann architecture suffers from the data transfer between computation unit and memory, i.e. the so-called von-Neumann bottleneck. Thus, new computing paradigms emerge leveraging in-memory computing (IMC). Stateful memristor aided logic (MAGIC), which has attracted great attention in recent years, enables the realization of a functionally complete set of Boolean logic functions within a memristive memory array. Whereas typically digital-switching memristive devices are exploited, in this work, we investigate the realization of MAGIC gates using analog-switching BiFeO3 (BFO) devices. The simulation results reveal that the MAGIC NIMP gates, as proposed for a digital-switching memristive device, do not work correctly with the analog BFO devices. By studying the input drift and blocking effect while operating MAGIC NIMP gate, we propose two alternative MAGIC gates by exploiting analog memristors, i.e. a NOR gate and a -P gate.
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