高效GaN-HEMT射频功率放大器的设计

2015 Conference on Design of Circuits and Integrated Systems (DCIS) Pub Date : 2015-11-01 DOI:10.1109/DCIS.2015.7388610

Nagavenkat K. Gaddam, J. Machado da Silva

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引用次数: 0

摘要

本文介绍了一种适用于认知无线电收发器的GaN-HEMT j类功率放大器的设计和实现，该功率放大器具有高效率和宽带特性，可以在大负载变化下保持这些特性。仿真结果表明，在1.3 ~ 2.3 GHz频段上，增益30 dB，功率增益效率(PAE)为60% ~ 76%的大信号测量结果。对负载变化的适应性正在开发中，以确保大负载变化时PAE超过70%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of a high efficiency GaN-HEMT RF power amplifier

This paper presents the design and implementation of a GaN-HEMT, class-J power amplifier suitable for cognitive radio transceivers, i. e., which presents high-efficiency and wideband characteristics, being these maintained for large load variations. Simulation results are presented which show large-signal measurement results of 30 dB gain with 60%-76% power-added efficiency (PAE) over a band of 1.3-2.3 GHz. Adaptivity to load changes is being developed to ensure PAE above 70% for large load variations.

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2015 Conference on Design of Circuits and Integrated Systems (DCIS)

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