芯片上器官腔室微加热器热分布的数值研究

G. M. Ferreira, P. Sousa, V. Pinto, S. Catarino, P. Sousa, G. Minas
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引用次数: 1

摘要

在器官芯片(OoC)中,温度必须保持稳定,以保持良好的控制和具有代表性的微环境。这项工作提出了一个微加热器的数值模拟集成在聚二甲基硅氧烷室,将包括OoC。在考虑流体流动及其方向、微加热器和衬底材料以及微加热器顶部氧化层(电绝缘体)厚度的情况下,进行了数值模拟以评估热量分布。对硅(Si)和玻璃作为衬底,铂(Pt)和铝(Al)作为微加热器材料进行了评价。结果表明,在相同的输入功率下,硅衬底比玻璃衬底保证了更好的热均匀性,尽管温度值更低。对于微加热器,虽然Al比Pt获得了更好的热均匀性,但它需要更高的电流才能达到相同的温度(35-45°C)。氧化层厚度对达到的温度没有影响。Si衬底/Pt微加热器微系统可将流体腔加热至35-45°C范围,电流消耗分别为0.06 A ~ 0.1 A,具有良好的热均匀性和低功耗。对于流体流动,在相同的驱动条件下,随着流量的增加,区域温度降低。还分析了通量方向的影响,并观察到,在120 $\mu\mathrm{L}/\min$时,它不影响腔内的热分布。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Numerical Study of the Heat Distribution Generated by a Microheater in an Organ-on-a-Chip Chamber
In an organ-on-a-chip (OoC), temperature must be kept stable for a well-controlled and human representative microenvironment. This work presents the numerical simulation of a microheater to be integrated in a polydimethylsiloxane chamber that will comprise an OoC. Numerical simulations were performed to evaluate the heat distribution, considering the fluid flow and its direction, the microheater and substrate materials, and the thickness of the oxide layer (electric insulator), on top of the microheater. Silicon (Si) and glass for the substrate, and platinum (Pt) and aluminium (Al) for the microheater materials were evaluated. Results showed that the Si substrate assured better heat uniformity than glass, although reaching lower temperature values, for the same input power. For the microheater, although Al achieved better heat uniformity than Pt, it needed higher current to reach the same temperatures (ranging from 35-45°C). The oxide layer thickness did not affect the achieved temperature. The Si substrate/Pt microheater microsystem was able to heat the fluid chamber up to the 35-45°C range, with current consumption from 0.06 A to 0.1 A, respectively, showing good heat uniformity and low power consumption. Regarding the fluid flow, the domain temperature decreases as the flow rate increases, for the same actuation conditions. It was also analysed the effect of the flux direction and it was observed that, at 120 $\mu\mathrm{L}/\min$, it did not affect the heat distribution in the chamber.
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