先进设计系统中单电子晶体管的建模

2020 International Conference on Green and Human Information Technology (ICGHIT) Pub Date : 2020-02-01 DOI:10.1109/ICGHIT49656.2020.00023

H. Tran, M. Luong, N. Hoang

{"title":"先进设计系统中单电子晶体管的建模","authors":"H. Tran, M. Luong, N. Hoang","doi":"10.1109/ICGHIT49656.2020.00023","DOIUrl":null,"url":null,"abstract":"Single-electron transistor (SET) was successfully modeled in Advanced Design System (ADS) software. Simulation of the model in ADS (modeled SET) showed typical characteristics of SET including Coulomb blockade (CB) region and Coulomb oscillations. The simulated results of the modeled SET were compared with those of a commercial SIMON simulator in certain ranges of drain-source voltage and temperature validating accuracy of the modeling method.","PeriodicalId":377112,"journal":{"name":"2020 International Conference on Green and Human Information Technology (ICGHIT)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Modeling of Single-Electron Transistor in Advanced Design System\",\"authors\":\"H. Tran, M. Luong, N. Hoang\",\"doi\":\"10.1109/ICGHIT49656.2020.00023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Single-electron transistor (SET) was successfully modeled in Advanced Design System (ADS) software. Simulation of the model in ADS (modeled SET) showed typical characteristics of SET including Coulomb blockade (CB) region and Coulomb oscillations. The simulated results of the modeled SET were compared with those of a commercial SIMON simulator in certain ranges of drain-source voltage and temperature validating accuracy of the modeling method.\",\"PeriodicalId\":377112,\"journal\":{\"name\":\"2020 International Conference on Green and Human Information Technology (ICGHIT)\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 International Conference on Green and Human Information Technology (ICGHIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICGHIT49656.2020.00023\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 International Conference on Green and Human Information Technology (ICGHIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICGHIT49656.2020.00023","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

在先进设计系统(ADS)软件中成功地对单电子晶体管(SET)进行了建模。在ADS(模拟的SET)中对该模型进行了仿真，发现了典型的SET特性，包括库仑阻塞区和库仑振荡。在一定的漏源电压和温度范围内，与商用SIMON模拟器的模拟结果进行了比较，验证了建模方法的准确性。

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Modeling of Single-Electron Transistor in Advanced Design System

Single-electron transistor (SET) was successfully modeled in Advanced Design System (ADS) software. Simulation of the model in ADS (modeled SET) showed typical characteristics of SET including Coulomb blockade (CB) region and Coulomb oscillations. The simulated results of the modeled SET were compared with those of a commercial SIMON simulator in certain ranges of drain-source voltage and temperature validating accuracy of the modeling method.

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2020 International Conference on Green and Human Information Technology (ICGHIT)

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