一个1.8V 10b 210MS/s CMOS流水线ADC,具有86dB SFDR,无需校准

J. Li, Robert Leboeuf, M. Courcy, G. Manganaro
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引用次数: 18

摘要

提出了一种基于0.18 um CMOS工艺的1.8 V 10 b 210 MS/s CMOS流水线ADC。在2.5 b/级的流水线ADC架构中,采用opamp共享技术实现了高采样率下的低功耗。通过调节开关驱动方案可以很好地控制opamp的沉降行为。巧妙的电容阵列布置使得在相同系统失配情况下,SFDR性能优越。当输入信号为20 MHz时,该ADC在210 MS/s下可实现85.9 dB SFDR和9.57 ENOB。在高达100mhz的输入频率下,保持76 dB以上的SFDR和9.5的ENOB性能。在1.8 V电源下,ADC核心功耗为140 mW。ADC核心的有效模面积为1.5 mm2。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 1.8V 10b 210MS/s CMOS Pipelined ADC Featuring 86dB SFDR without Calibration
A 1.8 V 10 b 210 MS/s CMOS pipelined ADC in 0.18 um CMOS process is presented. The low power consumption at high sampling rate is achieved by using an opamp-sharing technique in 2.5 b/stage pipelined ADC architecture. The opamp settling behavior is well controlled through a regulated switch driving scheme. The clever arrangement of capacitor array renders superior SFDR for the same given systematic mismatch. With a 20 MHz input signal, the ADC achieves 85.9 dB SFDR and 9.57 ENOB at 210 MS/s. Better than 76 dB SFDR and 9.5 ENOB performance is maintained for input frequency up to 100 MHz. The ADC core power consumption is 140 mW at 1.8 V supply. The active die area of ADC core is 1.5 mm2.
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