UIS测试条件下SiC功率MOSFET的电-热-机械仿真分析与优化

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM) Pub Date : 2022-10-23 DOI:10.1109/ASDAM55965.2022.9966742

A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval

{"title":"UIS测试条件下SiC功率MOSFET的电-热-机械仿真分析与优化","authors":"A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval","doi":"10.1109/ASDAM55965.2022.9966742","DOIUrl":null,"url":null,"abstract":"An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.","PeriodicalId":148302,"journal":{"name":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Electro-Thermo-Mechanical Simulation Analysis and Optimization of SiC Power MOSFET under UIS Test Condition\",\"authors\":\"A. Chvála, J. Marek, J. Kozarik, A. Messina, V. Vinciguerra, D. Donoval\",\"doi\":\"10.1109/ASDAM55965.2022.9966742\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.\",\"PeriodicalId\":148302,\"journal\":{\"name\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM55965.2022.9966742\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM55965.2022.9966742","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用先进的有效三维电热器件仿真技术，对SiC MOSFET晶体管的电学、热学和力学性能进行了优化。所提出的仿真方法具有仿真速度快、实现简单等优点，能够对复杂结构进行全面分析。利用仿真方法对功率SiC MOSFET进行了电学和热分析。分析比较了SiC MOSFET晶体管的两种键合方法。仿真结果表明，优化后的夹键概念比线键具有更好的电学和热学性能。

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Electro-Thermo-Mechanical Simulation Analysis and Optimization of SiC Power MOSFET under UIS Test Condition

An optimization of electrical, thermal, and mechanical properties of SiC MOSFET transistors supported by advanced effective 3-D electro-thermal device simulation is presented. The developed simulation method is capable of a full analysis of complex structures with a high speed of simulation and simple implementation. The simulation method is utilized for electrical and thermal analysis of power SiC MOSFET. Two bonding methods of SiC MOSFET transistor are analyzed and compared. Simulation results demonstrated that the optimized clip-bond concept has better electrical and thermal performance than the wire-bond.

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来源期刊

2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM)

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