硅纳米线和槽波导的严格表征

2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011) Pub Date : 2011-10-01 DOI:10.1109/IMOC.2011.6169227

B. Rahman, D. Leung, N. Kejalakshmy, K. Grattan

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引用次数: 0

摘要

采用数值高效、严格的h场有限元方法，给出了硅基纳米线的全矢量模态场和Poynting矢量剖面。研究结果还表明，新型垂直和水平槽波导可以引导TE和TM模式通过低折射率介电区。

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Rigorous characterization of silicon nanowires and slot waveguides

Full-vectorial modal field and Poynting vector profiles for silicon based nanowires are presented by using a numerically efficient and rigorous H-field finite element method. Results for novel vertical and horizontal slot waveguides are also presented showing TE and TM modes guidance through the low index dielectric regions.

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来源期刊

2011 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference (IMOC 2011)

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