利用量子阱混合实现InGaAs-InAlGaAs多量子阱中2/ sp1倍/2交叉点开关的单片集成

Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595) Pub Date : 2002-08-07 DOI:10.1109/FOPC.2002.1015821

B. Qiu, G. Ternent, S. McDougall, J. Marsh

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引用次数: 2

摘要

我们报道了使用溅射SiO/ sub2 /量子阱混合技术将2/spl倍/2交叉点开关集成在单片上，该开关包含无源波导、MMI耦合器、电吸收调制器和半导体光放大器(SOA)。由于集成soa的增益补偿，开关可以是无损的，并且具有高达26 dB的消光比。

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Monolithic integration of 2/spl times/2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum well intermixing

We report 2/spl times/2 crosspoint switches, containing passive waveguides, MMI couplers, electro-absorption modulators and semiconductor optical amplifiers (SOA) integrated monolithically using the sputtered SiO/sub 2/ quantum well intermixing technique. The switches can be lossless due to the gain compensation of the incorporated SOAs, and have extinction ratios up to 26 dB.

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Proceedings of 2002 IEEE/LEOS Workshop on Fibre and Optical Passive Components (Cat.No.02EX595)

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