用于汽车雷达系统的77 GHz T/R MMIC芯片组

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997 Pub Date : 1997-10-12 DOI:10.1109/GAAS.1997.628285

K. Kamozaki, N. Kurita, W. Hioe, T. Tanimoto, H. Ohta, T. Nakamura, H. Kondoh

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引用次数: 23

摘要

研制了一种由低噪声放大器、功率放大器、下变频器和压控振荡器组成的77 ghz MMIC芯片组，构成汽车雷达系统的T/R模块。该低噪声放大器在62-96.5 GHz频段的增益为9.5 dB/spl plusmn/1.0 dB, NF为5.8 dB。该功率放大器在70.7 GHz至80.3 GHz范围内实现了13.5 dB/spl plusmn/2.5 dB的小信号增益，在1db增益压缩时输出功率为9.7 dBm。下变频器在75 GHz至98 GHz频段的转换增益为1.3 dB/spl plusmn/2.2 dB, NF为7.5 dB。在75.5-76.6 GHz的调谐范围内，77 GHz压控振荡器的输出功率为0.9 dBm/spl plusmn/0.9 dB。为了提高芯片组的可制造性和性能/成本特征，采用了以小MMIC芯片尺寸实现宽带性能的设计理念。芯片组的总面积为7.92 mm/sup /。

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A 77 GHz T/R MMIC chip set for automotive radar systems

A 77-GHz MMIC chip set consisting of a low noise amplifier, a power amplifier, a down converter and a voltage controlled oscillator has been developed to constitute a T/R module for automotive radar systems. The low noise amplifier exhibited a gain of 9.5 dB/spl plusmn/1.0 dB over a 62-96.5 GHz band with an NF of 5.8 dB. The power amplifier achieved a small-signal gain of 13.5 dB/spl plusmn/2.5 dB from 70.7 GHz to 80.3 GHz with 9.7 dBm output power at the 1 dB gain compression. The down converter exhibited a conversion gain of 1.3 dB/spl plusmn/2.2 dB in a band between 75 GHz and 98 GHz with an NF of 7.5 dB. The 77-GHz voltage controlled oscillator exhibited an output power of 0.9 dBm/spl plusmn/0.9 dB over a tuning range of 75.5-76.6 GHz. A design philosophy has been adopted of achieving broadband performance in small MMIC chip size in order to improve manufacturability and performance/cost characteristics of the chip set. The total area for the chip set is 7.92 mm/sup 2/.

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GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997

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