{"title":"高折射率绝缘体上硅亚微米级定向耦合器的分析与制作","authors":"Ido E. Dotan, D. Goldring, D. Mendlovic","doi":"10.1109/EEEI.2006.321085","DOIUrl":null,"url":null,"abstract":"In this paper we describe the design, fabrication and analysis of a directional coupler using sub micron SOI waveguides. Specifically, we focus on couplers featuring sub 100nm waveguide separation. Several phenomena that occur due to the ultra small gap are examined. We show that the etching rate at the waveguides gap is decreased and as a consequence the coupling between the waveguides is enhanced. Three dimensional numerical simulations are presented as well as fabrication results.","PeriodicalId":142814,"journal":{"name":"2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel","volume":"138 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis and fabrication of sub micron scale directional coupler in high-index Silicon-On-Insulator\",\"authors\":\"Ido E. Dotan, D. Goldring, D. Mendlovic\",\"doi\":\"10.1109/EEEI.2006.321085\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we describe the design, fabrication and analysis of a directional coupler using sub micron SOI waveguides. Specifically, we focus on couplers featuring sub 100nm waveguide separation. Several phenomena that occur due to the ultra small gap are examined. We show that the etching rate at the waveguides gap is decreased and as a consequence the coupling between the waveguides is enhanced. Three dimensional numerical simulations are presented as well as fabrication results.\",\"PeriodicalId\":142814,\"journal\":{\"name\":\"2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel\",\"volume\":\"138 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EEEI.2006.321085\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE 24th Convention of Electrical & Electronics Engineers in Israel","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EEEI.2006.321085","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analysis and fabrication of sub micron scale directional coupler in high-index Silicon-On-Insulator
In this paper we describe the design, fabrication and analysis of a directional coupler using sub micron SOI waveguides. Specifically, we focus on couplers featuring sub 100nm waveguide separation. Several phenomena that occur due to the ultra small gap are examined. We show that the etching rate at the waveguides gap is decreased and as a consequence the coupling between the waveguides is enhanced. Three dimensional numerical simulations are presented as well as fabrication results.