OxRRAM技术单端感测放大器鲁棒性评价

2013 8th IEEE Design and Test Symposium Pub Date : 2013-12-01 DOI:10.1109/IDT.2013.6727097

H. Aziza, M. Bocquet, M. Moreau, J. Portal

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引用次数: 2

摘要

本文在电路水平上定量分析了OxRRAM细胞可变性对电路性能的影响。针对记忆单元的可变性，对单端感测放大器结构进行了评估。这项研究能够在不影响可靠性的情况下提高OxRRAM产量并减少读取操作期间的电池消耗。由于oxrram中开关过程的随机性，导致了很大的可变性，所有的模拟都是蒙特卡罗导向的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single-ended sense amplifier robustness evaluation for OxRRAM technology

In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.

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2013 8th IEEE Design and Test Symposium

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