采用Al/Si衬底制备大面积LED用阳极氧化铝纳米模板

Lan Shen, Doo-hwan Kim, Bonggi Min, Z. Gu, Chinho Park
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引用次数: 0

摘要

采用Al/Si衬底制备了阳极氧化铝(AAO)纳米模板,铝膜厚度约为500 nm。采用阳极氧化法制备了不同尺寸和深度的微孔。通过调节应用电位、温度、酸溶液类型及其浓度,形成了适合大面积InGaN LED应用的最佳形态结构。扫描电镜(SEM)研究表明,六边形紧密排列的纳米孔阵列具有光滑的壁形和明确的直径,对应于应用模板的直径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Preparation of anodic aluminum oxide nano-template using Al/Si substrate for large area LED applications
Anodic aluminum oxide (AAO) nano-templates were prepared using the Al/Si substrates with the thickness of the aluminum films of about 500 nm. The pores of various sizes and depths were fabricated electrochemically through anodic oxidation. The optimum morphological structure for large area InGaN LED applications was formed by adjusting the applied potential, temperature, types of acid solution and their concentration. Scanning electron microscopy (SEM) investigations showed that hexagonal-close-packed nanopore arrays have smooth wall morphologies and well-defined diameters corresponding to the diameter of the applied template.
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