{"title":"一种135-170 GHz功率放大器，采用先进的sigehbt技术","authors":"N. Sarmah, B. Heinemann, U. Pfeiffer","doi":"10.1109/RFIC.2013.6569584","DOIUrl":null,"url":null,"abstract":"Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-band (110-170 GHz) are essential towards implementation of broadband frequency multiplier chains at sub-mmWave frequencies. In this paper we present the design of a 3-stage power amplifier (PA) with 3-dB bandwidth of 35 GHz (135-170 GHz) and implemented in 130 nm SiGe BiCMOS technology. A staggered tuning approach where the peak gain of the individual or group of individual stages are tuned at offset frequencies is used for broadband operation. In the 135-170 GHz, the small signal gain for the PA is 14-17 dB and the saturated output power (Psat) varies from 5-8 dBm and the output referred 1 dB compression point (P1dB) varies from 1-6 dBm over this frequency range. The nominal dc power consumption of this PA is 320 mW with peak PAE of 1.6%. To our best knowledge, this is the highest bandwidth reported for silicon PAs in the D band.","PeriodicalId":203521,"journal":{"name":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"42","resultStr":"{\"title\":\"A 135–170 GHz power amplifier in an advanced sige HBT technology\",\"authors\":\"N. Sarmah, B. Heinemann, U. Pfeiffer\",\"doi\":\"10.1109/RFIC.2013.6569584\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-band (110-170 GHz) are essential towards implementation of broadband frequency multiplier chains at sub-mmWave frequencies. In this paper we present the design of a 3-stage power amplifier (PA) with 3-dB bandwidth of 35 GHz (135-170 GHz) and implemented in 130 nm SiGe BiCMOS technology. A staggered tuning approach where the peak gain of the individual or group of individual stages are tuned at offset frequencies is used for broadband operation. In the 135-170 GHz, the small signal gain for the PA is 14-17 dB and the saturated output power (Psat) varies from 5-8 dBm and the output referred 1 dB compression point (P1dB) varies from 1-6 dBm over this frequency range. The nominal dc power consumption of this PA is 320 mW with peak PAE of 1.6%. To our best knowledge, this is the highest bandwidth reported for silicon PAs in the D band.\",\"PeriodicalId\":203521,\"journal\":{\"name\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"42\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIC.2013.6569584\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2013.6569584","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 135–170 GHz power amplifier in an advanced sige HBT technology
Summary form only given. High-power, broadband power amplifiers (PA) operating in the D-band (110-170 GHz) are essential towards implementation of broadband frequency multiplier chains at sub-mmWave frequencies. In this paper we present the design of a 3-stage power amplifier (PA) with 3-dB bandwidth of 35 GHz (135-170 GHz) and implemented in 130 nm SiGe BiCMOS technology. A staggered tuning approach where the peak gain of the individual or group of individual stages are tuned at offset frequencies is used for broadband operation. In the 135-170 GHz, the small signal gain for the PA is 14-17 dB and the saturated output power (Psat) varies from 5-8 dBm and the output referred 1 dB compression point (P1dB) varies from 1-6 dBm over this frequency range. The nominal dc power consumption of this PA is 320 mW with peak PAE of 1.6%. To our best knowledge, this is the highest bandwidth reported for silicon PAs in the D band.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
